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| FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET July 2006 FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET 20V, 35A, 9m Features General Description Max rDS(on) = 9m at VGS = 10V, ID = 35A Max rDS(on) =13m at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G GDS I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 20 20 35 58 159 66 49.5 -55 to 175 mJ W C A Units V V Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 3.03 100 52 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD8580 FDU8580 Device FDD8580 FDU8580 Package TO-252AA TO-251AA Reel Size 13'' N/A(Tube) Tape Width 12mm N/A Quantity 2500 units 75 units (c)2006 Fairchild Semiconductor Corporation FDD8580/FDU8580 Rev. A 1 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 16V, VGS = 0V VGS = 20V TJ = 150C 20 17.3 1 250 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 35A Drain to Source On Resistance VGS = 4.5V, ID = 33A VGS = 10V, ID = 35A TJ = 175C VDS = 5V,ID = 35A 1.2 1.8 -6.3 6.6 9.3 10.6 61 9.0 13.0 14.5 S m 2.5 V mV/C Forward Transcondductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 1085 340 205 1.3 1445 450 310 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(5) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller"Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 10V ID = 35A Ig = 1.0mA VDD = 10V, ID = 35A VGS = 10V, RGS = 27 7 11 59 34 19 10 3.5 3.9 14 20 94 54 27 14 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 35A VGS = 0V, IS = 15A IF = 35A, di/dt = 100A/s IF = 35A, di/dt = 100A/s 0.95 0.85 26 19 1.25 1.2 39 29 V ns nC Notes: 1: Pulse time < 300s, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 21A ,VDD = 18V, VGS = 10V. FDD8580/FDU8580 Rev. A 2 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 120 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V 4.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 100 ID, DRAIN CURRENT (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 VGS = 3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 4.0V VGS = 4.5V 80 60 40 20 0 VGS = 4.5V VGS = 4.0V VGS = 3.5V VGS = 10V 0 1 2 3 4 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 60 80 ID, DRAIN CURRENT(A) 100 120 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 35A VGS = 10V ID = 35A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 20 15 TJ = 175oC 10 TJ = 25oC -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 120 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 200 100 VGS = 0V ID, DRAIN CURRENT (A) 100 80 60 40 20 0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VDD = 5V 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = - 55oC TJ = -55oC 1 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 2 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8580/FDU8580 Rev. A FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 CAPACITANCE (pF) 3000 Ciss VDD = 7V VDD = 10V f = 1MHz VGS = 0V 6 4 2 0 1000 Coss VDD = 13V Crss 0 5 10 15 Qg, GATE CHARGE(nC) 20 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics 100 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 50 40 30 CURRENT LIMITED BY PACKAGE VGS = 10V 10 TJ = 25oC VGS = 4.5V TJ = 125oC 20 10 RJC = 3.03 C/W o TJ = 150oC 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 1000 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 9. Unclamped Inductive Switching Capability 500 100 ID, DRAIN CURRENT (A) 10us Figure 10. Maximum Continuous Drain Current vs Case Temperature P(PK), PEAK TRANSIENT POWER (W) 10000 VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - T C ---------------------150 100us 1000 10 LIMITED BY PACKAGE 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25OC 100 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) DC SINGLE PULSE 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 40 10 -5 10 10 -4 10 10 10 t, PULSE WIDTH (s) -3 -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD8580/FDU8580 Rev. A 4 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 1 NORMALIZED THERMAL IMPEDANCE, ZJC 0.1 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.005 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD8580/FDU8580 Rev. A 5 www.fairchildsemi.com FDD8580/FDU8580 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FDD8580/FDU8580 Rev. A 6 www.fairchildsemi.com |
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